{"product_id":"investigation-of-gate-current-in-neutron-irradiated-alxga1-xngan-heterogeneous-field-effect-transistors-using-voltage-and-temperature-dependence-1288308345","title":"Investigation of Gate Current In Neutron Irradiated AlxGa1-xN\/GaN Heterogeneous Field Effect Transistors Using Voltage and Temperature Dependence","description":"\u003cp\u003e\u003cstrong\u003eISBN:\u003c\/strong\u003e 1288308345\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eAuthor:\u003c\/strong\u003e Gray, Thomas E\u003c\/p\u003e\u003cp\u003e\u003cstrong\u003eCondition:\u003c\/strong\u003e New\u003c\/p\u003e\u003cp\u003eThe gate current of Al27Ga73N\/GaN heterogeneous field effect transistors (HFETs) is investigated using current-voltage (IV) and current-temperature (IT) measurement demonstrating that trap assisted tunneling (TAT) is the primary current mechanism. Excellent fit to experimental data is achieved using a thermionic trap assisted tunneling (TTT) model. A single value for each of the primary parameters (Schottky barrier height, trap energy, donor density and trap density) results in a sigma of 1.38x10-8 A for IT data measured at five voltages between 85K and 290K and for IV data measured at three temperatures between 0.0 V and -4.0 V. High energy (gt;0.5 MeV) neutron irradiation at fluences between 4.0x1010 and 1.2x1012 n\/cm2 confirms an increase of gate current with fluence. A change in IV characteristics, interpreted as an increase in magnitude of threshold voltage, is also observed.\u003c\/p\u003e","brand":"Mia Karts","offers":[{"title":"Default Title","offer_id":51964318318880,"sku":"NEW1288308345","price":21.54,"currency_code":"USD","in_stock":false}],"url":"https:\/\/miakarts.com\/products\/investigation-of-gate-current-in-neutron-irradiated-alxga1-xngan-heterogeneous-field-effect-transistors-using-voltage-and-temperature-dependence-1288308345","provider":"Miakarts Books","version":"1.0","type":"link"}