Characterization of Stress in GaN-on-Sapphire Microelectromechanical Systems Structures...
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Characterization of Stress in GaN-on-Sapphire Microelectromechanical Systems Structures Using Micro-Raman Spectroscopy
Book Details
- Author
- Francisco E Parada
- Publisher
- Biblioscholar
- Format
- Paperback
- Language
- English
- Category
- Schools & Teaching
- Condition
- New
- ISBN-13
- 9781288368518
- ISBN-10
- 1288368518
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ISBN: 1288368518
Author: Parada, Francisco E
Condition: New
Micro-Raman ( Raman) spectroscopy is an e cient, non-destructive techniquewidely used to determine the quality of semiconductor materials and microelectrome-chanical systems. This work characterizes the stress distribution in wurtzite gal-lium nitride grown on c-plane sapphire substrates by molecular beam epitaxy. Thiswide bandgap semiconductor material is being considered by the Air Force ResearchLaboratory for the fabrication of shock-hardened MEMS accelerometers.
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Characterization of Stress in GaN-on-Sapphire Microelectromechanical Systems Structures Using Micro-Raman Spectroscopy
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